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| Ordering number : ENA0961 VEC2822 SANYO Semiconductors DATA SHEET VEC2822 Features * * MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance * Ultrahigh-speed switching. * 1.8V drive. [SBD] * Low switching noise. * Low leakage current and high reliability due to planar structure. Specifications Absolute Maximum Ratings at Ta=25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage VRRM VRSM 15 17 V V VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (1200mm20.8mm) 1unit --20 10 --3.5 --14 1.0 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : CY Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O0307PE TI IM TC-00000899 No. A0961-1/6 VEC2822 Continued from preceding page. Parameter Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol IO IFSM Tj Tstg Conditions Mounted on a ceramic board (1200mm20.8mm) 1unit 50Hz sine wave, 1 cycle Ratings 2 10 --55 to +125 --55 to +125 Unit A A C C Electrical Characteristics at Ta=25C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF IR C trr IR=0.2mA IF=2A VR=7.5V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 15 0.5 27 10 0.56 30 V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0V VDS=-20V, VGS=0V VGS=8V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-2A ID=-2A, VGS=-4.5V ID=-1A, VGS=-2.5V ID=-0.3A, VGS=-1.8V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-10V, VGS=-4.5V, ID=-3.5A VDS=-10V, VGS=-4.5V, ID=-3.5A VDS=-10V, VGS=-4.5V, ID=-3.5A IS=--3.5A, VGS=0V --20 --1 10 --0.4 3.5 5.8 55 77 112 680 115 80 12 57 68 58 8.7 1.5 1.8 -0.83 --1.2 72 108 168 --1.4 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm (typ) 7012-005 0.25 0.3 0.15 Electrical Connection 8 7 6 5 8 7 65 1 : Anode 2 : No Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode 1 2 3 4 2.8 2.3 0.25 1 2 2.9 3 0.65 4 Top view 0.75 1 : Anode 2 : No Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode SANYO : VEC8 0.07 No. A0961-2/6 VEC2822 Switching Time Test Circuit [MOSFET] VIN 0V --4.5V VIN ID= --2A RL=5 VDD= --10V trr Test Circuit [SBD] Duty10% 100mA 10mA 50 10s --5V 100 10 100mA D PW=10s D.C.1% VOUT G trr VEC2822 P.G 50 S --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --0.1 --0.2 --0.3 ID -- VDS --3. 0 --2 V .5V --3. 5 --2.0V [MOSFET] --7 ID -- VGS VDS= --10V [MOSFET] V Drain Current, ID -- A --4.0 V V --1.8 Drain Current, ID -- A --6 --5 --4.5 V --4 --3 --2 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 25 --1.6 C --1.8 --1 Ta = 75 C --25 C VGS= --1.5V --2.0 160 IT11954 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS [MOSFET] 160 IT06417 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc [MOSFET] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 140 120 100 Static Drain-to-Source On-State Resistance, RDS(on) -- m 140 120 --0 I D= .8V, = --1 VGS .3A ID= --0.3A 80 60 40 20 0 0 --1 --2 --2.0A 100 80 = VGS 1.0 = -, ID 5V --2. A 60 A --2.0 I= .5V, D = --4 VGS 40 20 --60 --3 --4 --5 --6 --7 --8 --9 --10 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT11827 Case Temperature, Tc -- C IT11828 No. A0961-3/6 VEC2822 3 yfs -- ID [MOSFET] VDS= --10V Forward Transfer Admittance, yfs -- S 2 --10 7 5 3 2 IS -- VSD [MOSFET] VGS=0V Ta= 75 C 2 5 C --0.3 --0.4 --0.5 --0.6 --0.7 10 7 5 3 2 Source Current, IS -- A C --25 Ta= C 25 C 75 --0.1 7 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 --10 IT06420 7 --0.01 7 5 3 2 --0.8 --0.9 --1.0 --1.1 --1.2 --0.001 --0.2 Drain Current, ID -- A 5 3 SW Time -- ID [MOSFET] VDD= --10V VGS= --4.5V 2 IT06421 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] --25 C --1.0 7 5 3 2 f=1MHz Switching Time, SW Time -- ns 2 1000 100 7 5 3 2 td(off) tf Ciss, Coss, Crss -- pF 7 5 3 2 Ciss tr td(on) Coss 100 7 5 3 Crss 10 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain Current, ID -- A --4.5 --4.0 --3.5 IT06422 VGS -- Qg [MOSFET] 3 2 --10 7 5 Drain-to-Source Voltage, VDS -- V IT06423 ASO [MOSFET] Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --3.5A IDP= --14A ID= --3.5A PW10s Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 2 4 6 8 10 IT13025 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0 s 10m 1ms s 10 DC 10 op 0m era s tio n( Ta = Operation in this area is limited by RDS(on). 25 C ) --0.01 --0.1 Ta=25C Single pulse Mounted on a ceramic board (1200mm20.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC 1.2 Drain-to-Source Voltage, VDS -- V IT13019 PD -- Ta M [MOSFET] Allowable Power Dissipation, PD -- W 1.0 ou nt ed 0.8 on ac er am 0.6 ic bo ar d( 12 0.4 00 m m2 0.8 0.2 m m )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT13020 No. A0961-4/6 VEC2822 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IT10276 IF -- VF [SBD] 10000 IR -- VR Ta=125C [SBD] 1000 Reverse Current, IR -- A Forward Current, IF -- A 100C 100 75C 10 50C 25C 1.0 0.1 0C 25 100 C C 75C 50 C 25C 0C --25C Ta= 1 0.01 0.001 0 2 4 6 --25C 8 10 12 14 16 Forward Voltage, VF -- V 1.6 1.4 Average Reverse Power Dissipation, PR(AV) -- mW Average Forward Power Dissipation, PF(AV) -- W PF(AV) -- IO (1) Reverse Voltage, VR -- V 0.025 IT10277 [SBD] PR(AV) -- VRM [SBD] Rectangular wave (2) (4) (3) 0.020 1.2 1.0 0.8 0.6 0.4 0.2 0 0 360 Sine wave 180 360 (1)Rectangular wave =300 (2)Rectangular wave =240 (3)Rectangular wave =180 (4)Sine wave =180 Rectangular wave VR 360 (1) (2) (3) 0.015 0.010 Sine wave VR 180 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 0.5 1.0 1.5 2.0 2.5 IT10432 0.005 360 (4) 0 0 2 4 6 8 10 12 14 16 Average Output Current, IO -- A 140 Peak Reverse Voltage, VRM -- V 5 3 2 IT10433 Tc -- IO [SBD] C -- VR [SBD] 100 80 *Mounted on a ceramic board (500mm20.8mm), Rth(j-a)=68C/W Interterminal Capacitance, C -- pF 120 Case Temperature, Tc -- C (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 100 7 5 3 2 60 Rectangular wave 360 (4) 40 (1) (2) (3) 20 0 0 Sine wave 180 360 0.5 1.0 1.5 2.0 2.5 IT10434 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Average Output Current, IO -- A 14 IFSM -- t IS 20ms t Reverse Voltage, VR -- V IT10275 [SBD] Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 12 10 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s ID00435 No. A0961-5/6 VEC2822 Note on usage : Since the VEC2822 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2007. Specifications and information herein are subject to change without notice. PS No. A0961-6/6 |
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